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| @vic AV2907 Amplifier Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N2907 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -40 -60 -5.0 -600 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C TO-92 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = -3.0 Vdc) Collector Cutoff Current (VCE = -10 V) Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO -- -- IEBO ICEO IBEX -- -- -- -0.01 -10 -10 -10 -50 nAdc nAdc nAdc -40 -60 -5.0 -- -- -- -- -50 Vdc Vdc Vdc nAdc Adc v 300 ms, Duty Cycle v 2.0%. Cp 1 Website: http://www.avictek.com Copyright @vic Electronics Corp. 1 @vic ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max AV2907 Unit ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc)(1) (IC = -500 mAdc, VCE = -10 Vdc)(1) Collector - Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base - Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) hFE 75 100 100 100 50 VCE(sat) -- -- VBE(sat) -- -- -1.3 -2.0 -0.4 -1.0 Vdc -- -- -- 300 -- Vdc -- SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(1), (2) (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 -- -- -- 8.0 30 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) (Figure 2) (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) (Figures 1 and 5) ton td tr toff ts tf -- -- -- -- -- -- 50 10 40 110 80 30 ns ns ns ns ns ns 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -30 V 200 ns v v -30 V 200 +15 V -6.0 V 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k 1.0 k 50 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit Copyright @vic Electronics Corp. 2 Website: http://www.avictek.com @vic TYPICAL CHARACTERISTICS 3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = -1.0 V VCE = -10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 -0.1 - 55C AV2907 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 IC = -1.0 mA -0.6 -10 mA -100 mA -500 mA -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 Figure 4. Collector Saturation Region 300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT tr 500 VCC = -30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 ts = ts - 1/8 tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Turn-Off Time Copyright @vic Electronics Corp. 3 Website: http://www.avictek.com @vic TYPICAL SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 f = 1.0 kHz NF, NOISE FIGURE (dB) 8.0 IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0 AV2907 6.0 6.0 4.0 4.0 IC = -50 A -100 A -500 A -1.0 mA 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 30 20 C, CAPACITANCE (pF) Ceb 400 300 200 10 7.0 5.0 3.0 2.0 -0.1 Ccb 100 80 60 40 30 20 -1.0 -2.0 VCE = -20 V TJ = 25C -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain -- Bandwidth Product -1.0 TJ = 25C -0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = -10 V +0.5 0 RqVC for VCE(sat) -0.5 -1.0 -1.5 -2.0 VCE(sat) @ IC/IB = 10 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 RqVB for VBE -0.6 -0.4 -0.2 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients Copyright @vic Electronics Corp. 4 Website: http://www.avictek.com |
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